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| Central TM PROCESS Semiconductor Corp. Switching Diode CPD74 Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size Die Thickness Anode 1, 2, 3, 4 Bonding Pad Area Top Side Metalization Back Side Metalization 25 x 25 MILS 6.0 MILS 3.5 x 4.0 MILS Al - 12,000A Au - 5,000A Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS GEOMETRY GROSS DIE PER 3 INCH WAFER 10,000 PRINCIPAL DEVICE TYPES CMEDA-6i 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (1-November 2004) Central TM PROCESS CPD74 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (1-November 2004) |
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